Photonics Components / Non-Telecom Lineup

DFB lasers for gas sensing

DFB lasers suitable for near infrared molecular absorption.
Available wavelength range between 1260nm and 2340nm.

• 14-pin butterfly (HF/H₂O/NH₃/CO/H₂S/CH₄/CO₂)
• TO5 with TEC (HF/H₂O/NH₃/CO/CH₄/CO₂)

UTC-Photomixer module

Photonic generation of THz signals is promising for various applications. The uni-travelling-carrier (UTC) photomixer is one of the best solutions, because it provides a high 3dB down bandwidth and high-saturation-output power simultaneously.
NTT Innovative Devices have developed two types of UTC photomixer modules. One is a compact rectangular-waveguide-coupled photomixer, and another is an antenna-integrated photomixer module.

FMB diode module

Femi-level managed barrier (FMB) diode module is an ultra-low noise THz detector based on InP/InGaAs heterostructure. Instead of metal/semiconductor interface in a Schottky barrier diode (SBD), InGaAs/InP hetero-interface (barrier height ~ 100meV) is used in an FMB diode.
This low barrier height provides a low diode differential resistance (Rd) and good impedance matching between a diode and a broadband bowtie antenna.

100 GHz Baseband Amplifier (IOD-AMP-100)

This ultra-compact baseband amplifier with DC blocks provides a flat gain of 8 dB in a frequency range of 300 kHz to 100 GHz. An InP-based heterojunction bipolar transistor (InP HBT) IC technology is applied to realize this ultra broadband performance.
The integrated DC blocks in input / output ports allow direct connections of various electrical interfaces. It uses push-on type coaxial connectors (G3PO compatible) and an ultra-small metal package with a volume of 0.5 cc. The amplifier is suitable to boost the amplitude of digital signals with a speed of up to 150 Gbps.

J-band Power Amplifier (IOD-PA-J)

This power amplifier provides a power gain of 10 dB in the J-band frequency range (220-320 GHz) and a saturated output power of 8 dBm.
An InP-based heterojunction bipolar transistor (InP HBT) IC technology is applied to realize the high frequency and high output power performance. It has an easy-to-use module configuration in which the WR-03 waveguide can be connected to the input / output port. The amplifier is suitable to boost the power of J-band millimeter wave signals in transceivers for wireless communications systems or sensing systems.

100 GHz AMUX (IOD-AMUX-100) / ADEMUX (IOD-ADEMUX-100)

This Analog multiplexer (AMUX) and Analog demultiplexer (ADEMUX) extend a bandwidth of digital-to-analog converters (DACs) and analog-to-digital converters (ADCs) up to 100 GHz. An InP-based heterojunction bipolar transistor (InP HBT) IC technology is applied to realize the broad band performance. The module has 8 push-on connectors for input/output/clock ports.
The AMUX multiplexes analog signals from two DACs into one signal whose bandwidth is twice that of the input signals. The ADEMUX demultiplexes the high bandwidth input analog signal into two signals with half the bandwidth. They can double the bandwidth of the DAC / ADC and are expected to be used for a high-performance arbitrary waveform generator (AWG), a bit-error-tester (BERT), and other equipment for a 200 GBd class optical communication.

Visible, Near-IR, and Mid-IR Light Generation

NTT Innovative Devices produces periodically poled lithium niobate (PPLN) waveguide modules for visible, near-IR, and mid-IR light generation. The module consists of a PPLN waveguide, a thermoelectric cooler, and a thermistor. A custom design of the poling period is available. Please specify your pump and SHG/SFG/DFG wavelenghts down to 2 decimal places when ordering modules.

780nm Light Generation

NTT Innovative Devices produces periodically poled lithium niobate(PPLN) waveguide modules for 780nm second harmonic generation(SHG). The module consists of a PPLN waveguide, a thermoelectric cooler, and a thermistor. A phase matching bandwidth (FWHM) of a standard 34mm-long waveguide module is 0.36nm at pump wavelength. A temperature coefficient for the wavelength tuing is 0.1nm/deg C.