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High-power EMLSemiconductor Laser Diodes (LD)

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Chip on carrier of EA-DFB laser monolithically integrated with SOA is useful for various optical sub-assembly (OSA).

FEATURES

  • 10GBaud, 25GBaud* and 50GBaud* (*planning)
  • Support NRZ and PAM4 format
  • High optical output power and low power consumption
  • Applicable to long-reach Ethernet/high-splitting-ratio PON
  • Easy replacement from conventional EA-DFB laser

FUNCTION AND APPLICATIONS

  • OLT for NG-PON2, 10G-EPON, XGS-PON, 25G-PON and 50G-PON
  • Optical transceiver for 25G/50G/100G/200G/400G-based Ethernet

25Gbaud-based APD Chip on Carrier (CoC)Avalanche Photodiode (APD)

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25Gbuad-based APD chip is mounted on a carrier as face down, which is useful as a component of optical sub-assembly (OSA).

FEATURES

  • InP-based APD
  • 25.78Gbps and 27.95Gbps
  • High responsivity and gain, High resistivity for Overload
  • Applicable for both of NRZ and PAM4 operation

FUNCTION AND APPLICATIONS

  • Optical receivers for 25G/50G/100G/200G-based Ethernet and Access NW

10G/1Gbps Burst mode Transimpedance Amplifier (TIA)Burst Mode Transimpedance Amplifier (TIA)

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10G/1Gbps dual rates Burst-mode TIA for the IEEE standard, 10G-EPON

FEATURES

  • High input sensitivity and Low Noise
  • High-speed AGC response

APPLICATIONS

  • IEEE standard, 10G-EPON

10G/2.5G/1Gbps Burst mode Transimpedance Amplifier (TIA)Burst Mode Transimpedance Amplifier (TIA)

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10G/2.5G/1G multi-rate Burst-mode TIA complied to both IEEE and ITU-T standard, XGS-PON, NG-PON2 and 10G-EPON

FEATURES

  • High input sensitivity and Low Noise
  • High-speed AGC response

APPLICATIONS

  • IEEE and ITU-T standard, 10G-EPON/XGS-PON/NG-PON2

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